View VN800_54944.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
VN800S(8961) / VN800PT(8961)
HIGH SIDE DRIVER
TYPE VN800S(8961) VN800PT(8961)
s s
RDS(on) 135 m
IOUT 1.2 A
VCC 36 V
CMOS COMPATIBLE INPUT THERMAL SHUTDOWN s CURRENT LIMITATION s SHORTED LOAD PROTECTION s UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN s PROTECTION AGAINST LOSS OF GROUND s VERY LOW STAND-BY CURRENT s REVERSE BATTERY PROTECTION (*) DESCRIPTION The VN800S(8961), VN800PT(8961) are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient BLOCK DIAGRAM
SO-8
PPAK
ORDER CODES
PACKAGE
SO-8 PPAK
TUBE T&R VN800S(8961) VN800S(8961)TR VN800PT(8961) VN800PT(8961)TR
compatibility table). Active current combined with thermal shutdown and restart protect the device against Device automatically turns off in case pin disconnection.
limitation automatic overload. of ground
VCC
VCC CLAMP
OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION
GND Power CLAMP
DRIVER INPUT LOGIC CURRENT LIMITER OUTPUT
STATUS OVERTEMPERATURE DETECTION
(*) See note at page 8
July 2002
1/22
VN800S(8961) / VN800PT(8961)
ABSOLUTE MAXIMUM RATING
Symbol VCC - VCC - IGND IOUT - IOUT IIN VIN VSTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current Input Voltage Range DC Status Voltage Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT VESD - STATUS - OUTPUT - VCC Maximum Switching Energy (L=77.5mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=1.5A) Maximum Switching Energy (L=125mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=1.5A) Power Dissipation TC=25C Junction Operating Temperature Case Operating Temperature Storage Temperature Max Inductive Load (VCC=30V; RLOAD=48; Tamb=100C; Rthcase>ambient25C/W) Value SO-8 PPAK 41 - 0.3 - 200 Internally Limited -6 +/- 10 -3/+VCC + VCC 4000 4000 5000 5000 121 195 4.2 41.7 Internally Limited - 40 to 150 - 55 to 150 2 Unit V V mA A A mA V V V V V V mJ mJ W C C C H
EMAX EMAX Ptot Tj Tc Tstg Lmax
CONNECTION DIAGRAM (TOP VIEW)
VCC VCC OUTPUT OUTPUT VCC 8 1 5 4 N.C. STATUS INPUT GND
5 4 3 2 1
OUTPUT STATUS INPUT GND
SO-8
PPAK
CURRENT AND VOLTAGE CONVENTIONS
IS
IIN INPUT ISTAT STATUS
VCC
IOUT OUTPUT GND VCC
VIN VSTAT IGND
VOUT
2/22
VN800S(8961) / VN800PT(8961)
THERMAL DATA
Symbol Rthj-case Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-lead Thermal Resistance Junction-ambient Value SO-8 30 93 (*) PPAK 3 78 (**) Unit C/W C/W C/W
Max Max Max
(*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35 thick) connected to all VCC pins. (**) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35 thick).
ELECTRICAL CHARACTERISTICS (8VSymbol VCC VUSD VOV RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 4 Max 36 5.5 135 10 1.5 270 20 3.5 2.6 1 0 50 5 3 Unit V V V m m A mA mA mA A A A
IOUT =0.5A; Tj=25C IOUT=0.5A Off State; VCC=24V; Tcase=25C On State; VCC=24V On State; VCC=24V; Tcase=100C VCC=VSTAT=VIN=VGND=24V VOUT=0V VIN=VOUT=0V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C
IS
Supply Current
ILGND IL(off1) IL(off2) IL(off3)
Output Current at turn-off Off State Output Current Off State Output Current Off State Output Current
SWITCHING (VCC=24V)
Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope Test Conditions RL=48 from VIN rising edge to VOUT=2.4V RL=48 from VIN falling edge to VOUT=21.6V RL=48 from VOUT=2.4V to VOUT=19.2V RL=48 from VOUT=21.6V to VOUT=2.4V Min Typ 10 40 See relative diagram See relative diagram Max Unit s s V/s
Turn-off Voltage Slope
V/s
INPUT PIN
Symbol VINL IINL VINH IINH VI(hyst) IIN Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Current Test Conditions VIN=1.25V VIN=3.25V 0.5 VIN=VCC=36V 200 Min 1 3.25 10 Typ Max 1.25 Unit V A V A V A
3/22
1
VN800S(8961) / VN800PT(8961)
ELECTRICAL CHARACTERISTICS (continued) STATUS PIN
Symbol VSTAT ILSTAT CSTAT Parameter Test Conditions Status Low Output Voltage ISTAT=1.6 mA Status Leakage Current Normal Operation; VSTAT=VCC=36 V Status Pin Input Normal Operation; VSTAT= 5V Capacitance Min Typ Max 0.5 10 30 Unit V A pF
PROTECTIONS
Symbol TTSD TR Thyst TSDL Ilim Vdemag Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Condition DC Short Circuit Current Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 1.2 2 Max 200 Unit C C C s A V
Tj>Tjsh VCC=16V; RLOAD=10m IOUT=0.5 A; L=6mH
VCC-47 VCC-52 VCC-57
OVERTEMP STATUS TIMING VIN Tj>Tjsh
VSTAT tSDL tSDL
4/22
2
VN800S(8961) / VN800PT(8961)
Switching time Waveforms
VOUT
80% dVOUT/dt(on) tr 10%
90% dVOUT/dt(off) tf t
VIN
td(on)
td(off)
t
TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage INPUT L H L H H L H L H L H OUTPUT L H L X X L L L L L L STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H
5/22
VN800S(8961) / VN800PT(8961)
Figure 1: Peak Short Circuit Current Test Circuit
+VCC
10k
VCC
STATUS CONTROL UNIT GND INPUT RIN
OUTPUT
RL=10m
GND
Figure 2: Avalanche Energy Test Circuit
+VCC
10k
VCC
STATUS CONTROL UNIT GND INPUT RIN
OUTPUT
LOAD
GND
6/22
VN800S(8961) / VN800PT(8961)
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I C C C C C C I -25 V +25 V -25 V +25 V -4 V +26.5 V II -50 V +50 V -50 V +50 V -5 V +46.5 V TEST LEVELS III -75 V +75 V -100 V +75 V -6 V +66.5 V TEST LEVELS RESULTS II III C C C C C E C C C C C E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01 400 ms, 2
IV C C C C C E
CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
7/22
VN800S(8961) / VN800PT(8961)
APPLICATION SCHEMATIC
VCC
5V V olt. Reg
Control & Diagnostic I/O
VCC 24VDC
Rprot
ST TUS A
D id
Rprot B US AS IC
INPUT
OU TPUT LO D A R
GND
L DG ND
ND V ND RG G
GND PROTECTION REVERSE BATTERY
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (-VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device's datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.
C I/Os PROTECTION:
If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot ) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.
8/22
VN800S(8961) / VN800PT(8961)
Figure 3: Waveforms
NORMAL OPERATION INPUT LOAD VOLTAGE STATUS UNDERVOLTAGE VUSDhyst VUSD INPUT LOAD VOLTAGE STATUS undefined
VCC
OVERVOLTAGE VCCVOV
Tj INPUT LOAD CURRENT STATUS
TTSD TR
OVERTEMPERATURE
9/22
VN800S(8961) / VN800PT(8961)
Off State Output Current
IL(off1) (A)
2.5 2.25 2 1.75 1.5 1.25 1 0.75 2 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175 1 0 -50 -25 0 25 50 75 100 125 150 175
High Level Input Current
Iih (A)
8 7
Off state Vcc=36V Vin=Vout=0V
Vin=3.25V
6 5 4 3
Tc (C)
Tc (C)
Status Leakage Current
Ilstat (A)
0.1 0.09
ILIM Vs Tcase
Ilim (A)
2.5 2.25
Vstat=Vcc=36V
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 175
2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25
Vcc=24V Rl=10mOhm
0
25
50
75
100
125
150
175
Tc (C)
Tc (C)
On State Resistance Vs Tcase
Ron (mOhm)
400 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175
On State Resistance Vs VCC
Ron (mOhm)
400 350
Iout=0.5A Vcc=8V; 13V; 36V
Iout=0.5A
300 250
Tc= 150C
200 150
Tc= 25C
100 50 0 5 10 15 20 25 30 35 40
Tc= - 40C
Tc (C)
Vcc (V)
10/22
VN800S(8961) / VN800PT(8961)
Input High Level
Vih (V)
3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 -50 -25 0 25 50 75 100 125 150 175
Input Low Level
Vil (V)
2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Input Hysteresis Voltage
Vhyst (V)
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175
Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Turn-on Voltage Slope
dVout/dt(on) (V/ms)
1600
Turn-off Voltage Slope
dVout/dt(off) (V/ms)
800 700
1
1400 1200 1000 800 600 400 200 0 -50 -25 0 25 50 75 100 125 150 175
Vcc=24V Rl=48Ohm
600 500 400 300 200 100 0 -50
Vcc=24V Rl=48Ohm
-25
0
25
50
75
100
125
150
175
Tc (C)
Tc (C)
11/22
VN800S(8961) / VN800PT(8961)
PPAK Maximum turn off current versus load inductance
ILMAX (A) 10
A B
1
C
0.1 1 10 L(mH)
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization
100
1000
t
12/22
VN800S(8961) / VN800PT(8961)
SO-8 Maximum turn off current versus load inductance
ILMAX (A) 10
1
A B C
0.1 1 10 L(mH)
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization
100
1000
t
13/22
VN800S(8961) / VN800PT(8961)
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.14cm2, 2cm2).
Rthj-amb Vs PCB copper area in open box free air condition
RTHj_amb (C/W)
SO8 at 2 pins connected to TAB
110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5
PCB Cu heatsink area (cm^2)
14/22
VN800S(8961) / VN800PT(8961)
PPAK THERMAL DATA
PPAK PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.44cm2, 8cm2).
Rthj-amb Vs PCB copper area in open box free air condition
RTHj_amb (C/W)
90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10
PCB Cu heatsink area (cm^2)
15/22
VN800S(8961) / VN800PT(8961)
PPAK Thermal Impedance Junction Ambient Single Pulse
ZTH (C/W) 1000
100
0.44 cm2 6 cm2
10
1
0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000
Thermal fitting model of a single channel HSD in PPAK
Pulse calculation formula
Z TH = R TH + Z THtp ( 1 - )
where
= tp T
0.44 0.04 0.25 0.3 2 15 61 0.0008 0.007 0.02 0.3 0.45 0.8 6
Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
24
T_amb
5
16/22
VN800S(8961) / VN800PT(8961)
SO-8 Thermal Impedance Junction Ambient Single Pulse
ZT H (C/W) 1000
100
0.5 cm2 2 cm2
10
1
0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000
Thermal fitting model of a single channel HSD in SO-8
Pulse calculation formula
Z TH = RTH + Z THtp ( 1 - )
where
= tp T
0.14 0.24 1.2 4.5 21 16 58 0.00015 0.0005 7.50E-03 0.045 0.35 1.05 2
Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
28
T_amb
2
17/22
VN800S(8961) / VN800PT(8961)
SO-8 MECHANICAL DATA
mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4 1.27 0.6 8 (max.) 0.8 1.2 0.031 0.047 0.14 0.015 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5 6.2 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S L1
18/22
VN800S(8961) / VN800PT(8961)
PPAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D1 D E E1 e G G1 H L2 L4 R V2 Package Weight 0 Gr. 0.3 0.60 0.2 8 4.90 2.38 9.35 0.8 6.00 6.40 4.7 1.27 5.25 2.70 10.10 1.00 1.00 MIN. 2.20 0.90 0.03 0.40 5.20 0.45 0.48 5.1 6.20 6.60 TYP MAX. 2.40 1.10 0.23 0.60 5.40 0.60 0.60
P032T1
19/22
VN800S(8961) / VN800PT(8961)
SO-8 TUBE SHIPMENT (no suffix)
B
C
A
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
100 2000 532 3.2 6 0.6
TAPE AND REEL SHIPMENT (suffix "13TR") REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End
All dimensions are in mm.
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
20/22
VN800S(8961) / VN800PT(8961)
PPAK TUBE SHIPMENT (no suffix)
A C
B
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
75 3000 532 6 21.3 0.6
TAPE AND REEL SHIPMENT (suffix "13TR") REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
End
All dimensions are in mm.
Start Top cover tape No components 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min Components No components
21/22
1
VN800S(8961) / VN800PT(8961)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
22/22

▲Up To Search▲

Price & Availability of VN800

	To Download VN800 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .